Description
Single layer h-BN (Boron Nitride) film grown in copper foil.
h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).During Chemical Vapor Deposition, BN is grown on both sides of the copper foil
Specifications:
Close to complete coverage (90-95%), with some minor holes
Thickness of the copper foil is 25 microns
High crystalline quality, see SAD (Selected area [electron] diffraction) data
Quality is confirmed by TEM. TEM shows perfect hexagonal structure.
We now offer larger sizes of single layer hBN on copper foil (max size is 6"x6"). Please contact us at info@graphenelab.com for pricing and availability.
EM image of perfect hexagonal structure
On SEM image (below), BN is seen as wrinkles on top of the copper foil.
SAD data of h-BN
If transferred onto an SiO2 substrate, the BN film may be seen as a white film. However, it is difficult to recognize the BN film on copper using a microscope.
Absorbance data BN on copper
Transfer: PMMA Procedure, similar to that of graphene. It may be transferred on most substrates, which we may do in-house as custom work.
Academic References:
Ki Kang Kim, et. al. Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition. Nano Lett., 2012, 12 (1), pp 161–166
Ki Kang Kim, et. al. Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices, ACS Nano, 2012, 6 (10), pp 8583–8590
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