Monolayer Graphene on 285 nm SiO2 Wafer

Graphene SupermarketSKU: 1ML-SIO2-5P

Set: 5-pack
Sale price$225.00


Monolayer graphene on 1cm x 1cm silicon wafers (p-doped) with a 285 nanometer silicon dioxide coating.

Properties of Graphene Film:

The thickness and quality of our graphene films is controlled by Raman Spectroscopy. 

The graphene coverage of this product is about 95%

The graphene film is continuous, with occasional holes and cracks

Organic and PMMA residues can be observed

The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation

Sheet Resistance: 660-1,500 Ω/square

Raman Spectrum of Single-Layer Graphene on SiO2

Our graphene films are predominantly single-layer graphene (more than 90%) with occasional small multilayer islands (approximately 10%).

Properties of Silicon/Silicon Dioxide Wafers:

Oxide Thickness: 285 nm

Color: Violet

Wafer thickness: 525 micron

Resistivity: 0.001-0.005 Ω⋅cm

Type/Dopant: P/Boron

Orientation: <100>

Front Surface: Polished

Back Surface: Etched

RCA cleaned


Graphene electronics and transistors

Conductive coatings

Aerospace industry applications

Support for metallic catalysts



Chemical and biosensors

Multifunctional materials based on graphene

Graphene Research

Our graphene films are manufactured using a PMMA assisted transfer method. Please refer to the references below for more details.


Optical Image of Single-Layer Graphene


Academic References / Read More

Graphene Growth

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 5 June 2009: Vol. 324. no. 5932, pp. 1312 - 1314

Graphene Transfer

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes, Li, Nano Lett., 2009, 9 (12), pp 4359–4363

Toward Clean and Crackless Transfer of Graphene Liang,ACS Nano, 2011, 5 (11), pp 9144–9153

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