CVD Graphene/CVD Hexagonal Boron Nitride heterostructure on SiO2/Si wafer
Properties of Graphene/h-BN Film:
Single Layer Graphene Film on Single Layer h-BN Film transferred onto 285 nm (p-doped) SiO2/Si wafer
The thickness and quality of each film is controlled by Raman Spectroscopy
The coverage of this product is about 98%
The films are continuous, with minor holes and organic residues
High Crystalline Quality
The graphene film is predominantly single layer (more than 95%) with occasional small multilayer islands (less than 5% bi-layers)
Sheet Resistance: 430-800 Ω/square
The graphene film as well as the h-BN film is grown via CVD method on the copper foil, then transferred onto the SiO2/Si wafer.
Properties of Silicon/Silicon Dioxide Wafers:
Oxide Thickness: 285 nm
Wafer thickness: 525 micron
Resistivity: 0.001-0.005 ohm-cm
Front Surface: Polished
Back Surface: Etched
Graphene/hBN interfaces are used where the graphene needs to be precisely gated, for increased mobility, and for reduced scattering.
h-BN is appealing as a substrate for graphene-based electronics because its surface is atomically smooth, it is free of dangling bonds, and has an analogous structure to graphene.
Using our h-BN on SiO2/Si wafers in conjunction with graphene will encourage you to explore graphene heterostructure for transistor applications
Our graphene/h-BN films are manufactured using a PMMA assisted transfer method. Please refer to the references below for more details.
We can offer custom sizes of graphene/h-BN films on a 4" wafer. Please contact us at email@example.com for more details.
Academic References / Read More
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 5 June 2009: Vol. 324. no. 5932, pp. 1312 - 1314
Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes, Li et.al., Nano Lett., 2009, 9 (12), pp 4359–4363
Toward Clean and Crackless Transfer of Graphene Liang et.al.,ACS Nano, 2011, 5 (11), pp 9144–9153
Electrical properties and applications of graphene, hexagonal boron nitride (h-BN), and graphene/h-BN heterostructures
Materials Today Physics, Science Direct: Vol 2, September 2017, pp 6-34
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