Two Layers of CVD Graphene Film on SiO2/Si Wafer

Two layers of CVD graphene film on SiO₂/Si wafer 

Properties of Graphene Film:

Two layers of single layer CVD graphene films are transferred onto 285 nm p-doped SiO₂/Si wafer

Size: 1cmx1cm; 4 pack

Each graphene film is transferred consecutively onto the wafer

The thickness and quality of our graphene film is controlled by Raman Spectroscopy

The graphene coverage of this product is about 98%

The graphene film is continuous, with minor holes and organic residues

Each graphene film is predominantly single layer (more than 95%) with occasional small multilayer islands (less than 5% bi-layers)

Each graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation

There is no A-B stacking order. The graphene films are randomly oriented with respect to each other

Sheet Resistance: 215-700 Ω/square

Properties of Silicon/Silicon Dioxide Wafers:

Oxide Thickness: 285 nm

Color: Violet

Wafer thickness: 525 micron

Resistivity: 0.001-0.005 ohm-cm

Type/Dopant: P/Boron

Orientation: <100>

Front Surface: Polished

Back Surface: Etched

Applications:

Graphene electronics and transistors

Conductive coatings

Aerospace industry applications

Support for metallic catalysts

Microactuators

MEMS and NEMS

Chemical and biosensors

Multifunctional materials based on graphene

Graphene Research

Our graphene films are manufactured using a PMMA assisted transfer method.

Please refer to the references below for more details.

Academic References / Read More

Graphene Growth

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 5 June 2009: Vol. 324. no. 5932, pp. 1312 - 1314

Graphene Transfer

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes, Li et.al., Nano Lett., 2009, 9 (12), pp 4359–4363

Toward Clean and Crackless Transfer of Graphene Liang et.al.,ACS Nano, 2011, 5 (11), pp 9144–9153