CVD Graphene Film/CVD h-BN Film Heterostructure on SiO2/Si wafer

Graphene SupermarketSKU: 1ML-CVD-GRAPH-BN-SiO2-4P

Quantity: 4-pack
Sale price$300.00


CVD Graphene/CVD Hexagonal Boron Nitride heterostructure on SiO2/Si wafer 

Properties of Graphene/h-BN Film:

Single Layer Graphene Film on Single Layer h-BN Film transferred onto 285 nm (p-doped) SiO2/Si wafer

Size: 1cmx1cm; 

The thickness and quality of each film is controlled by Raman Spectroscopy

The coverage of this product is about 98%

The films are continuous, with minor holes and organic residues

High Crystalline Quality

The graphene film is predominantly single layer (more than 95%) with occasional small multilayer islands (less than 5% bi-layers)

Sheet Resistance: 430-800 Ω/square

The graphene film as well as the h-BN film is grown via CVD method on the copper foil, then transferred onto the SiO2/Si wafer.


Properties of Silicon/Silicon Dioxide Wafers:

Oxide Thickness: 285 nm

Color: Violet

Wafer thickness: 525 micron

Resistivity: 0.001-0.005 ohm-cm

Type/Dopant: P/Boron

Orientation: <100>

Front Surface: Polished

Back Surface: Etched



Graphene/hBN interfaces are used where the graphene needs to be precisely gated, for increased mobility, and for reduced scattering.

h-BN is appealing as a substrate for graphene-based electronics because its surface is atomically smooth, it is free of dangling bonds, and has an analogous structure to graphene.

Using our h-BN on SiO2/Si wafers in conjunction with graphene will encourage you to explore graphene heterostructure for transistor applications


Our graphene/h-BN films are manufactured using a PMMA assisted transfer method. Please refer to the references below for more details.

We can offer custom sizes of graphene/h-BN films on a 4" wafer. Please contact us at for more details.


Academic References / Read More

Graphene Growth

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 5 June 2009: Vol. 324. no. 5932, pp. 1312 - 1314

Graphene Transfer

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes, Li, Nano Lett., 2009, 9 (12), pp 4359–4363

Toward Clean and Crackless Transfer of Graphene Liang,ACS Nano, 2011, 5 (11), pp 9144–9153

Graphene/h-BN Heterostructures

Electrical properties and applications of graphene, hexagonal boron nitride (h-BN), and graphene/h-BN heterostructures

Materials Today Physics, Science Direct: Vol 2, September 2017, pp 6-34

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