Multilayer CVD-grown graphene transferred onto 1cm x 1cm silicon wafers (p-doped) with a 285 nanometer silicon dioxide coating.
Properties of Graphene Film:
The thickness and quality of our graphene films is controlled by Raman Spectroscopy
The graphene coverage of this product is about 95%
The graphene film is continuous, with occasional holes and cracks
The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation
Sheet Resistance: 660-1,500 Ω/square
Optical Image of Multilayer Graphene on SiO2
The graphene grown on nickel film is multilayer and is not uniform. It looks like a patchwork whereas the “patches” have different thicknesses. The thickness of the film varies from 1 to 7 layers, with an average of 4. The graphene layers within the same patch are aligned relative to each other (there is a graphitic AB-staking order). The size of the patches is about 3-10 microns.
Properties of Silicon/Silicon Dioxide Wafers:
Oxide Thickness: 285 nm
Wafer thickness: 525 micron
Resistivity: 0.001-0.005 Ω⋅cm
Front Surface: Polished
Back Surface: Etched
Graphene electronics and transistors
Aerospace industry applications
Support for metallic catalysts
MEMS and NEMS
Chemical and biosensors
Multifunctional materials based on graphene
Our graphene films are manufactured using a PMMA assisted transfer method. Please refer to the references below for more details.
Academic References / Read More
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 5 June 2009: Vol. 324. no. 5932, pp. 1312 - 1314
Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes, Li et.al., Nano Lett., 2009, 9 (12), pp 4359–4363
Toward Clean and Crackless Transfer of Graphene Liang et.al., ACS Nano, 2011, 5 (11), pp 9144–9153
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