Monolayer graphene on 1cm x 1cm silicon wafers (p-doped) with a 285 nanometer silicon dioxide coating.
Properties of Graphene Film:
The thickness and quality of our graphene films is controlled by Raman Spectroscopy.
The graphene coverage of this product is about 95%
The graphene film is continuous, with occasional holes and cracks
Organic and PMMA residues can be observed
The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation
Sheet Resistance: 660-1,500 Ω/square
Raman Spectrum of Single-Layer Graphene on SiO2
Our graphene films are predominantly single-layer graphene (more than 90%) with occasional small multilayer islands (approximately 10%).
Properties of Silicon/Silicon Dioxide Wafers:
Oxide Thickness: 285 nm
Wafer thickness: 525 micron
Resistivity: 0.001-0.005 Ω⋅cm
Front Surface: Polished
Back Surface: Etched
Graphene electronics and transistors
Aerospace industry applications
Support for metallic catalysts
MEMS and NEMS
Chemical and biosensors
Multifunctional materials based on graphene
Our graphene films are manufactured using a PMMA assisted transfer method. Please refer to the references below for more details.
Optical Image of Single-Layer Graphene
Academic References / Read More
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 5 June 2009: Vol. 324. no. 5932, pp. 1312 - 1314
Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes, Li et.al., Nano Lett., 2009, 9 (12), pp 4359–4363
Toward Clean and Crackless Transfer of Graphene Liang et.al.,ACS Nano, 2011, 5 (11), pp 9144–9153
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