Multilayer h-BN (Boron Nitride) film grown in copper foil.
h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).
During Chemical Vapor Deposition, BN is grown on both sides of the copper foil
Close to complete coverage (90-95%), with some minor holes
Average Thickness of BN film is 13 nm
Thickness of the copper foil is 20 microns
Quality is confirmed by TEM. TEM shows perfect hexagonal structure.
TEM image of perfect hexagonal structure
AFM image of multilayer BN on Cu
AFM scan of multilayer BN on Cu
If transferred onto an SiO2 substrate, the BN film may be seen as a white film. However, it is difficult to recognize the BN film on copper using a microscope.
Transfer: PMMA Procedure, similar to that of graphene. It may be transferred on most substrates, which we may do in-house as custom work.
Ki Kang Kim, et. al. Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices, ACS Nano, 2012, 6 (10), pp 8583–8590
Payment & Security
Your payment information is processed securely. We do not store credit card details nor have access to your credit card information.